CMOS图像传感器辐照损伤效应试验方法

Test methods for radiation damage effects on CMOS image sensors

摘要:

CMOS图像传感器(CIS)在辐射环境中应用时会遭受辐照损伤。在空间辐射或核辐射环境中CIS遭受的辐照损伤效应主要包括电离总剂量效应、位移效应、单粒子效应。目前国内外学者主要通过开展CIS不同辐射粒子或射线辐照试验来评估CIS在不同辐射环境下的辐照损伤效应,因此,建立CIS辐照损伤效应试验方法对准确评估其辐照损伤具有重要意义。本文主要从辐照试验源选取、试验流程、辐照偏置条件、试验要求等方面研究了CIS电离总剂量效应、位移效应、单粒子效应辐照试验方法,从而形成CIS辐照损伤效应试验方法,为开展CIS辐照损伤评估和抗辐射加固性能考核提供了试验技术支持。

Abstract:

CMOS image sensor (CIS) will suffer radiation damage when it is used in radiation environment. The radiation damage effects on the CISs in space radiation or nuclear radiation environment mainly include total ionization dose effect, displacement effect, and single particle effect. At present, it is very important to evaluate the radiation damage effects on the CISs in different radiation environments through the radiation experiments of different radiation particles or rays. This paper mainly studies the total dose effect, displacement effect and single particle effect irradiation test method of the CISs from the aspects of radiation test source, experimental procedure, radiation bias condition, and radiation test requirement, and provides the test technical support for the evaluation of the CIS radiation damage and radiation hardening performance.