Abstract:A interline transfer coupled device (ITCCD) image sensor has been designed and developed. The effective array size of the device is 1920x1080, and the pixel size is 7.4umx7.4um. To achieve high charge conversion sensitivity, the device adopts 1.0 micron gate length amplifier which allows for a charge conversion sensitivity of 22.4uV/e and a saturation voltage output of 1300mV. In order to realize the vertical anti-blooming function, an n-type buried channel saddle p-well-n-type substrate structure is adopted. The vertical anti-blooming ability is 200X, which can meet the antibllooming requirements of the device under strong light.