Abstract:In order to meet the urgent need of low-cost 3D imaging and multi-function opto-electronic system, the new integrated technologies between silicon-based APD detector and quantum dots or 2D materials are the important research direction, which can achieve the optoelectronic integration chip. This paper explores the research on short wave infrared detection technology of silicon-based APD array based on hybrid dimension hetero-junction material. The application limitations of traditional APD devices and the research direction of photodetector with new semiconductor materials were first introduced. Next, the application of quantum dots and two-dimensional materials in photodetectors was also described. Then, the paper introduces the integration technology between mixed dimensional heterojunction materials and detectors, and emphasizes the advantages of the hybrid dimensional heterojunction materials. Subsequently, the research status of photodetectors based on heterojunction materials at home and abroad was reviewed, and the scientific issues of silicon APD short wave infrared detection array structures based on mixed dimensional heterojunction materials were summarized. Finally, the development and application of silicon APD short wave infrared detection arrays based on hybrid dimensional heterojunction material were discussed, which would expand the detection wavelength, and achieve the short wave infrared detection function. This study is of great significance for the design, optimization and manufacturing of high-performance APD device based on hybrid dimensional hetero-junction material.
