1.18 GW/cm2的p-NiO/β-Ga2O3异质结MOSFET的设计与研究

Design and study of p-NiO/β-Ga2O3 heterojunction MOSFET with the power factor of merit of 1.18GW/cm2

摘要:

本文在栅极凹槽结构的基础上，实现了一种增强型 β-Ga2O3 MOSFET，在凹槽区域引入p-NiO 层，形成了异质结结构，并通过添加一层氧化物有效抑制了栅极漏电流。同时优化了 β-Ga2O3的外延层浓度，p-NiO的掺杂浓度、长度和厚度四个重要结构参数。获得最佳参数后，设计了氮化层和场板结构以进一步提高器件的击穿电压。仿真结果表明，该器件的击穿电压为 2380 V，阈值电压为 +0.79 V，比导通电阻为 4.82mΩ.cm2，功率因数（PFOM）为 1.18 GW/cm2。最后，将本文提出的器件与无氧化物器件和无 p-NiO 器件进行了性能对比，结果表明，本文提出的器件结构具有更优越的性能。

Abstract:

In this paper, an enhanced β-Ga2O3 MOSFET is realized on the basis of the gate recess structure. A p-NiO layer is introduced in the recess region to form a heterojunction structure, and the gate leakage current is effectively suppressed by adding a layer of oxide. Four important structural parameters, epitaxial layer concentration of β-Ga2O3, doping concentration, length and thickness of p-NiO, were also optimized. After obtaining the optimal parameters, the nitride layer and field plate structure are designed to further improve the breakdown voltage of the device. The simulation results show that the device has a breakdown voltage of 2380 V, a threshold voltage of +0.79 V, a specific on-resistance of 4.82 mΩ.cm2, and a power factor of merit (PFOM) of 1.18 GW/cm2. Finally, the performance of the proposed device is compared with the oxide-free and p-NiO-free devices. The results show that the device structure proposed in this paper has superior performance.