400万像素低弥散内线转移CCD图像传感器

4 Million Pixels Interline Transfer CCD Image Sensor with Low Smear

摘要:

设计并研制了一款低弥散内线转移电荷耦合器件（ITCCD）图像传感器，器件有效阵列规模为2048×2048元，像素尺寸为9μm×9μm。为实现器件低的弥散特性，器件设计制作了垂直CCD p阱，在垂直CCD埋沟周围形成阻挡势垒，降低光生电子扩散至垂直CCD；在光敏区设计制作了微透镜阵列，汇聚入射光至光敏区，降低杂散光进入垂直CCD沟道；在垂直CCD设计制作了挡光金属钨，对光敏区外的垂直CCD形成良好的覆盖,经测试,器件弥散达到-82dB，可满足器件正常使用要求。

Abstract:

A low smear interline transfer charge coupled device image sensor has been designed and developed, with an effective array size of 2048×2048 elements and a pixel size of 9 micrometers×9 micrometers. To achieve low smear characteristics of the device, a vertical CCD p-well was designed and fabricated to form a barrier around the vertical CCD buried channel, reducing the entry of photo generated electrons into the vertical CCD channel; A microlens array was designed and fabricated in the photosensitive region to converge incident light into the photosensitive region and reduce stray light entering the vertical CCD channel; A light blocking tungsten metal was designed and produced in the vertical CCD, which formed a good coverage for the vertical CCD outside the photosensitive area. After testing, the device dispersion reached -82dB, which can meet the normal use requirements of the device.