Abstract:Aiming at the problems of compatibility of photodetection unit with standard process and difficulty in combining monolithic integration with process technology, a monolithic integrated high-response photodetection device based on complementary bipolar standard process is proposed in this paper. The monolithic integration scheme of photodetector accompanied with signal processing circuit is adopted to carry out the design and simulation of high-response photodetection unit and low-latency, high-rate signal processing unit, realizing the monolithic integration of the device, process technology merging and high-response photodetection. Test results show that the photoelectric response characteristics and signal processing functions are normal, and the required photoelectric detection parameters such as high response (peak response reaching 0.462A/W) , fast data output rate (maximum up to 12Mbd), low transmission delay (less than 41.8ns), low output logic level (0.15V), and low output leakage (less than 1.5uA) are achieved. The overall technical performance of the device proposed in the paper is excellent, which can meet the application requirements of miniaturized, highly integrated and low-cost photodetecion system.
