GaN基Micro-LED芯片低频噪声特性研究

Low-frequency noise characterization of GaN-based Micro-LED chips

摘要:

针对GaN基蓝光Micro-LED芯片，本文采用电流-电压（I-V）特性和电流噪声功率谱密度实验方法，研究其电流输运机制及不同电流注入下的低频噪声行为。研究表明，在低电流注入（1 nA

Abstract:

For GaN-based blue Micro-LED chips, this paper adopts the experimental methods of current-voltage (I-V) characteristics and current noise power spectral density to study the current transport mechanism and the low-frequency noise behavior under different current injections. The results show that under low current injection (1 nA