高温退火对低温硫化生长的ZnS薄膜性能的影响

Effect of high-temperature annealing on the properties of ZnS thin films grown by low-temperature sulfurization

摘要:

采用磁控溅射方法在石英玻璃衬底上沉积了Zn薄膜,然后低温硫化制备了ZnS薄膜,最后在500-800℃高温下和氩气氛中进行1h退火。以XRD、SEM、EDS和紫外-可见分光光度计等研究了退火温度对所得薄膜性能的影响。结果表明：低温硫化制备的ZnS薄膜为六方结构,在高温退火后,晶粒尺寸变大,在可见光范围透光率高达约80%,带隙为3.59-3.63eV。随着退火温度的升高,ZnS薄膜的晶粒尺寸从20nm增加至30nm,S/Zn原子比则降低,表面形貌也发生变化。其中,在≥600℃高温退火后,ZnS薄膜中还出现了硫杂质相。最佳高温退火温度为500℃,所得ZnS薄膜具有好的质量。

Abstract:

Zn thin films were deposited on quartz glass substrates using magnetron sputtering method, and then formed ZnS thin films via low-temperature sulfurization annealing. Finally, annealing ZnS films was carried out at the high temperatures of 500-800 ℃ and argon atmosphere for 1 hour. Effect of annealing temperature on the properties of the obtained ZnS films was investigated by XRD, SEM, EDS, and UV visible spectrophotometer. The results show that the ZnS thin film prepared by low-temperature sulfurization has a hexagonal structure. After high-temperature annealing, the grain size of obtained ZnS films increases, and their transmittance in the visible light range is about 80%, with the bandgaps of 3.59-3.63 eV. Moreover, with the increase of annealing temperature, the grain size of ZnS thin films increases from 20nm to 30nm, the S/Zn atomic ratio decreases, and the surface morphology also changes. Among them, sulfur impurities appear in the ZnS films after high-temperature annealing at a temperature of ≥ 600 ℃. The optimal high-temperature annealing temperature is 500 ℃, and the resulting ZnS film has good film quality.