Abstract:CMOS image sensors have the characteristics of low power consumption, low cost, high integration, high response speed, and high temperature measurement limit, and are widely used in the field of radiation temperature measurement.During the field experiment, the movement temperature of the CMOS image sensor will fluctuate with changes in environmental temperature, which will cause changes in the background grayscale and response coefficient, affecting the quantitative ability of the CMOS movement and increasing the temperature measurement error. We propose a universal calibration method to address this issue. By constructing a temperature calibration model for background grayscale and response coefficient, we achieve the stability of CMOS movement values under different environmental temperatures and improve temperature measurement accuracy. The article simulates environmental temperature changes from 273.2 K to 313.2 K in an external field using a high and low temperature chamber, and uses a standard high-temperature blackbody to obtain test data of a CMOS image sensor on a 1073.2 K target. The experimental results show that this correction method can reduce the maximum temperature difference of CMOS image sensor temperature measurement from 10.9 K to 2.2 K in an environment of 273.2 K~313.2 K.
