1064nm单光子探测硅基SPAD探测组件设计

Design of the 1064nm Silicon SPAD Module for Photon Detection

摘要:

设计了一种用于单光子探测的8×8阵列硅基SPAD探测组件，包括硅基SPAD焦平面阵列和高压读出电路。硅基SPAD焦平面阵列采用N+-p-π-P+结构，像元中心距为200μm，工作在盖革模式。SPAD像素单元采用背面反射镜、微纳散光结构提高1064nm波长的光子探测效率。高压读出电路采用单片集成技术，将高压淬灭电路、延迟复位电路、雪崩电流检测电路以及高压保护电路等集成在单一硅片上。硅基SPAD探测组件可实现8×8阵列规模的单光子信号并行检测，在40V过偏压条件下1064nm波长的平均光子探测效率达到11.1%，平均暗计数率为4.6kHz，在100ns死区时间下的后脉冲概率为6.76%。

Abstract:

A 8×8 silicon single-photon-avalanche-photodiode (SPAD) module for single photon detection has been designed, fabricated. The Silicon SPAD focal plane array used the N+-p-π-P+ structure is working at the Geiger avalanche mode, and the pixel pitch is 200μm. The SPAD pixel uses the back reflecting mirror and the micro-scattering structure to improve the photon detection efficiency at 1064nm wavelength. The readout integrated circuit (ROIC) integrated the high voltage quenching circuit, time-delayed reset circuit, avalanche current detecting circuit, high voltage protecting circuit and other function circuits on a single chip。The 8×8 silicon SPAD module can simultaneous detects the single photon，and the test results show that the photon detection efficiency of the SPAD module at excess voltage of 40V is about 11.1% at 1064nm wavelength, the average dark count rate is 4.6kHz, and the after-pulse probability is 6.76% when the dead time is about 100ns.