全局/滚动曝光兼容高动态抗辐照CMOS图像传感器设计

CMOS Image Sensor Design with Global/Rolling Exposure Compatibility, High Dynamics and Radiation Resistance

摘要:

针对高速目标的高精度探测及辐射环境的应用要求,为了解决高帧速、高动态、高精度数字化、兼容全局与滚动、抗辐照等技术难题,研究了CMOS 图像传感器架构、双增益像素、列并行高精度数字化、多通道高速读出、抗辐照加固等技术,研制出7.5μm×7.5μm、2048×2048可见光CMOS图像传感器,实现了高灵敏度高动态成像、高精度数字化和高帧速输出,具备全局与滚动曝光兼容、像素双增益、数字化位数可选、抗辐照等特点。测试结果表明：器件功能正常,成像效果良好,动态范围(高低增益结合模式下达72.5dB)、满阱电荷(127.6ke_-⁾、灵敏度(14.2V/lux.s)成像、帧速(100fps@10位兼容29.8fps@12位)、抗辐照(总剂量≥100krad(Si)、单粒子闩锁≥75MeV.cm₂^/mg)等指标满足预期要求,对高速高动态成像及辐射环境的系统应用具有重要意义。

Abstract:

Aiming at the high-precision detection of high-speed targets and the application requirements of radiation environment, in order to solve the technical problems of high frame rate, high dynamics, high-precision digitization, compatibility with global and rolling exposure and radiation resistance, A CMOS image sensor architecture and techniques including dual gain pixels, column-parallel high-precision digitization, multi-channel high-speed readout and radiation hardening were studied. A 7.5μm × 7.5μm, 2048 × 2048 visible light CMOS image sensor was developed, which achieved high-sensitivity and high-dynamic image, high-precision digitization and high frame rate output, and has the characteristics of compatibility with global and rolling exposure, dual-gain pixels, adjustable digitization bits and radiation resistance. Test results show that the device functions normally, the imaging output is satisfactory, and parameters including dynamic range (high-low gain mode reaches 72.5dB), full well capacity (127.6ke_^-), sensitivity (14.2V/lux.s), frame rate (100fps@10bit, 29.8fps@12bit compatible), radiation resistance (total dose ≥100krad (Si), single particle latch ≥75MeV.cm_²/mg) meet the expected requirements, which is of great significance for high-speed, high-dynamic imaging and radiation environment system applications.