3300V平面栅IGBT器件特性仿真研究

Simulation Study on the Characteristics of 3300V Planar Gate IGBT Device LI Wenpei1，WANG Yongshun1，ZHANG Lijun1,2，LI Mengmeng1，Huyao1,3

摘要:

绝缘栅双极型晶体管(IGBT)作为一种广泛应用于电子电路行业领域中的功率器件,具有导通电压低、通态电流大、开关速度快和输入阻抗高等优势。本文基于数值模拟软件建立了3300V/50A平面栅场截止型绝缘栅双极型晶体管器件（FS-IGBT）的仿真模型，通过设计器件结构及参数分别对击穿特性、转移特性以及导通特性进行分析。研究表明，漂移区厚度和掺杂浓度、P-body区掺杂浓度、P+衬底区掺杂浓度和N型缓冲区掺杂浓度等都对器件的击穿电压和导通压降产生一定影响。在合理的阈值电压范围内，通过研究漂移区、N型缓冲区和P-body区参数，结果显示FS-IGBT器件的饱和电压和关断损耗相较传统平面栅IGBT结构分别降低了5.2%和32%，击穿电压提高了14%，阈值电压为5.3V。

Abstract:

Insulated Gate Bipolar Transistors (IGBT) are widely used in the electronic industry due to their excellent advantages such as low on-state voltage, high current capability, fast switching speed and high input impedance. The physical model of 3300V/50A field cut-off Insulated Gate Bipolar Transistor (FS-IGBT) with planar gate structure was established based on device structure and physical mechanism in this paper. The breakdown performances, transfer and conduction characteristics were simulated and analyzed in depth. The results show that parameters such as drift region thickness and doping concentration, P-body region doping concentration, P+ substrate doping concentration and N-type buffer doping concentration have significant effects on the breakdown voltage and on-voltage drop of the device. Within a reasonable threshold voltage range, the performance parameters such as the drift region, N-type buffer and P-body region were researched. The results indicate that the saturation voltage and turn-off loss of the FS-IGBT device are reduced by 5.2% and 32%, respectively, compared with that of the conventional planar-gate IGBT structure and the breakdown voltage is improved by 14%, with a threshold voltage of 5.3V.