采用正交试验的喷淋式HVPE氧化镓生长腔仿真研究

Numerical study on HVPE chamber with showerhead for gallium oxide growth using orthogonal experiments

摘要:

第三代半导体材料α-Ga2O3因其高宽禁带和优异的巴利加优值而广泛应用于高功率器件等电子器件。α-Ga2O3的诸多生长方法中,HVPE可以达到制备大尺寸的α-Ga2O3晶圆对生长速率和质量以及成本的要求。对α-Ga2O3的喷淋式HVPE生长腔进行了生长过程的三维数值模拟。为了系统、有效地评估参数对生长结果的作用,引入正交试验方法对基于CFD模拟的生长参数进行分析。结果表明生长速率和均匀性与衬底倾斜角度、O2入口速率、N2入口速率、GaCl出口下倾角以及喷淋头的结构密切相关。研究提出了参数的优化组合,为工业上获得生长速率和生长均匀性均衡优化的外延层提供有用的参考。

Abstract:

The Third generation semiconductor materials α-Ga₂O₃ is widely used in electronic devices such as high-power devices due to its high bandgap and excellent Baliga figure of merit. Among many growth methods of α-Ga₂O₃, HVPE can meet requirements for the growth rate, quality, and cost in preparing large-sized α-Ga₂O₃wafers. A three-dimensional numerical simulation of the α-Ga₂O₃growth process in HVPE growth chamber with showerheads was conducted. In order to systematically and effectively evaluate the effect of parameters on growth results, the orthogonal experimental method is introduced to analyze the growth parameters based on CFD simulation. The results indicate that the growth rate and uniformity are closely related to the substrate tilt angle, O₂ inlet rate, N₂ inlet rate, GaCl outlet dip angle, and structure of showerheads. The study propose an optimized combination of parameters, providing useful reference for achieving a balance between growth rate and growth uniformity in the epitaxial layer in actual experiments.