空间限制退火制备的自供电p-CuI/u-GaN薄膜异质结蓝紫光探测器研究

Self-powered High-performance CuI/GaN Heterojunction Blue-UV Photodetector Prepared by Confined Space Annealing

摘要:

自供电型光电探测器通过内建电场即可完成信号的探测,无需外加电源,具有低功耗、高灵敏度及快速响应等特点,引起了研究者的广泛关注。文章利用简易的真空热升华方法制备出高结晶度的CuI微米颗粒薄膜。进一步利用空间限制退火技术抑制了退火过程中CuI分子的纵向扩散,显著改善了薄膜的均匀性和致密性。通过构建p-CuI/u-GaN异质结,实现了具有自供电特性的蓝-紫光探测器。该探测器的响应范围为波长小于420nm的蓝-紫光波段,在360nm的紫外光波段具有大响应度(51mA·W-1)、高比探测率(6.1×10¹¹Jones)、较快响应速度(上升时间为32ms,衰减时间为36ms)及良好的稳定性。研究结果表明,采用热升华结合空间限制退火技术能够制备出高质量的p-CuI薄膜,p-CuI/u-GaN异质结自供电蓝-紫光探测器为高性能半导体光电探测器件的制备提供了新的方法和途径。

Abstract:

Self-powered heterojunction photodetectors have attracted significant attention as they can detect signals driven by a built-in electric field without external power. They are characterized by low power consumption, high sensitivity, and a fast response speed. This study employs a simple vacuum thermal sublimation method to prepare highly crystalline CuI thin films. Additionally, a smooth and dense polycrystalline film is prepared by improving the smoothness and density using confined space annealing. By building a p-CuI/u-GaN heterojunction, self-powered blue-UV photodetectors are constructed. The device responds to the blue-UV light spectrum with wavelengths ＜420nm and exhibits excellent performance, including high responsivity (51mA/W-1), high detectivity (6.5×10¹¹Jones), fast response times (approximately 32ms rise time and 36ms decay time), good stability at the 360nm wavelength, and self-powering capabilities. This study provides a simple method for preparing high-quality semiconductor CuI films and offers new insights for the fabrication of high-performance photodetectors.