单片集成式高响应光电探测器件设计

Design of Monolithic Integrated High-Response Photodetection Device

摘要:

针对光电探测单元与标准工艺兼容、单片集成与工艺技术融合难度大等问题,文章基于互补双极标准工艺设计了单片集成式高响应光电探测器件,采用光电探测器和信号处理电路单片集成方案,开展高响应光电探测单元和低延迟高速率信号处理电路的设计与仿真,实现了器件的单片集成、工艺技术融合和高响应光电探测。测试结果表明,该器件光电响应特性和信号处理功能正常,实现了高响应(峰值响应达到0.462A/W)、快数据输出速率(最大达12Mbd)、低传输延迟(小于41.8ns)、低输出逻辑电平(0.15V)、低输出漏电(小于1.5μA)等光电探测要求。所设计的器件整体技术性能优异,可满足小型化、高集成、低成本的光电探测系统应用要求。

Abstract:

To address the compatibility issue of photodetection units with standard processes and the difficulty in combining monolithic integration with process technology, a monolithic integrated high-response photodetection device based on complementary bipolar standard process is proposed. A monolithic integration scheme for photodetectors accompanied by a signal-processing circuit is adopted to conduct the design and simulation of a high-response photodetection unit and a low-latency, high-rate signal-processing unit, thus realizing the monolithic integration of the device, process-technology merging, and high-response photodetection. Test results show that the photoelectric response characteristics and signal-processing functions are normal, and the required photoelectric detection parameters such as high response (peak response reaching 0.462A/W), high data output rate (maximum of 12Mbd), low transmission delay (less than 41.8ns), low output logic level (0.15V), and low output leakage (less than 1.5μA) are achieved. The overall technical performance of the proposed device is excellent and satisfies the application requirements of miniaturized, highly integrated, and low-cost photodetection systems.