大功率半导体激光器端面特性改善的研究

Study on the Improvement of Facet Characteristics of High-Power Semiconductor Lasers

摘要:

针对大电流下前腔面不稳定导致出现灾变性光学损伤(COMD)的问题,提出一种双区电极的半导体激光器,并对该结构激光器的COMD阈值、峰值功率、阈值电流、光谱稳定性及翘曲效应进行研究。在相同工艺条件下测试了单一电极结构和双区电极结构半导体激光器的COMD阈值、峰值功率、阈值电流、波长红移速度等参数。结果表明:在同等工艺条件下,主增益区阈值电流为80mA,阈值电流降低20%,在窗口区15mA电流的驱动下,双区电极的半导体激光器对比单电极半导体激光器COMD阈值能够提高13%、峰值功率能够提高12%,同时减少了波长红移并改善了翘曲效应。

Abstract:

To address the instability of the front cavity surface under high current, which can lead to catastrophic optical mirror damage (COMD), a semiconductor laser with a dual-zone electrode structure was proposed. This study investigated the COMD threshold, peak power, threshold current, spectral stability, and kink effect of this laser structure. Under the same process conditions, the COMD threshold, peak power, threshold current, and wavelength redshift rate of semiconductor lasers with a single-electrode structure and dual-zone electrode structure were tested. The results showed that, under the same process conditions, with a threshold current of 80mA in the main gain region, the threshold current of the laser with the dual-zone electrode structure was reduced by 20%. When driven by a 15mA current in the window region, compared to the single-electrode semiconductor laser, the semiconductor laser with the dual-zone electrodes could increase the COMD threshold by 13%, increase the peak power by 12%, and decrease the wavelength redshift while improving the kink effect.