基于大厚度六方氮化硼中子探测器的制备

Neutron Detectors Based on Large-Thickness Hexagonal Boron Nitrides

摘要:

六方氮化硼是一种中子敏感材料。介绍了使用低压气相化学沉积在1673K下以大约20μm/h的生长速率制备了高质量203μm厚的六方氮化硼。在氮化硼的两侧沉积厚度为100nm的金电极,制备了垂直结构的六方氮化硼中子探测器。该器件的电学性质表明制备的六方氮化硼材料的迁移率寿命的乘积(μτ)为2.8×10-6cm²/V,电阻率为1.5×10¹⁴Ω·cm。在850V电压下,该探测器对热中子的探测效率为34.5%,电荷收集效率为60%。

Abstract:

In this study, we prepare a high-quality 203μm-thick hexagonal boron nitride (h-BN) (which is neuron-sensitive) using low-pressure chemical vapor deposition at 1673K, achieving a growth rate of approximately 20μm/h. We fabricate h-BN neutron detectors with vertical structures by depositing 100nm-thick Au electrodes on both sides of h-BN. Our electrical transport measurement results show that the prepared h-BN material possesses a mobility-life product (μτ) and resistivity of 2.8×10-6cm²/V and 1.5×10¹⁴Ω·cm, respectively. The neutron detector based on the 203μm-thick h-BN exhibits neutron detection and charge collection efficiencies of 34.5% and 60%, respectively, at 850V when irradiated by thermal neutrons from Am-Be sources.