TBTB修饰CsPbBr3量子点发光二极管的制备及性能表征

Preparation and Performance Characterization of TBTB-Modified CsPbBr Quantum Dot Light-Emitting Diodes

摘要:

CsPbBr3量子点由于其色纯度高及荧光量子产率高等优势在发光领域引起了广泛的关注。本文通过配体辅助再沉淀法在合成CsPbBr3量子点,并加入新的短碳链配体以减少长碳链基团的表面存留。经过XRD,FT-IR,AFM等测试,显示该方法合成的量子点具有更好的导电性能,及更强的成膜性。其制备得到的QLED器件的发光亮度最大值达到15660 cd.m?² ,峰值EQE达到9.64%是单一钝化量子点QLED器件的峰值EQE的2.5倍以上。

Abstract:

CsPbBr3 quantum dots have garnered significant attention in the field of luminescence due to their high color purity and fluorescence quantum yield. This paper describes the synthesis of CsPbBr3 quantum dots using a ligand-assisted reprecipitation method, introducing new short-chain ligands to reduce the surface presence of long-chain groups. Through tests such as XRD, FT-IR, and AFM, the synthesized quantum dots showed improved conductivity and film-forming properties. The QLED devices prepared exhibited a maximum luminance of 15,660 cd.m?2 and a peak EQE of 9.64%, more than 2.5 times the peak EQE of original quantum dot QLED devices.