大功率半导体激光器端面特性改善的研究

Study on the Improvement of Facet Characteristics of High-Power Semiconductor Lasers

摘要:

针对大电流下前腔面不稳定导致出现COMD的问题,提出了一种双区电极的半导体激光器,并对该结构激光器的COMD阈值、峰值功率、阈值电流、光谱稳定性及kink效应进行研究。相同工艺条件下测试了单一电极结构和双区电极结构半导体激光器的COMD阈值、峰值功率、阈值电流、波长红移速度等参数,结果表明:在同等工艺条件下,主增益区阈值电流为80~85mA范围,阈值电流降低约18%,在窗口区15mA电流的驱动下,双区电极的半导体激光器对比单电极半导体激光器COMD阈值能够提高约11%、峰值功率能够提高约17%,同时减少了波长红移并改善了kink效应。

Abstract:

To address the issue of front surface instability under high current leading to the occurrence of Catastrophic Optical Mirror Damage (COMD), a semiconductor laser with a dual-zone electrode structure is proposed. This structure"s COMD threshold, peak power, threshold current, spectral stability, and kink effect were studied. Under the same fabrication conditions, the COMD threshold, peak power, threshold current, and wavelength shift rate of semiconductor lasers with single and dual-zone electrode structures were tested. The results show that, under equivalent fabrication conditions, the main gain region"s threshold current ranges from 80 to 85 mA, with a reduction of about 18% in threshold current. Driven by a 15 mA current in the window region, the dual-zone electrode semiconductor laser, compared to the single electrode semiconductor laser, can increase the COMD threshold by about 11%, increase peak power by about 17%, while also reducing wavelength shift and improving the kink effect.