空间限制退火制备的自供电p-CuI/u-GaN薄膜异质结紫外探测器研究

Self-powered high-performance CuI/GaN heterojunction ultraviolet detector prepared by confined space annealing

摘要:

自供电型光电探测器具有低功耗、高灵敏度、及快速响应等特点，吸引了广泛的研究兴趣。本文利用简易的真空热升华方法制备出高结晶度的CuI微米颗粒薄膜。进一步地，利用空间限制退火技术抑制了退火过程中CuI分子的纵向扩散，显著改善了薄膜的均匀性和致密性。通过构建p-CuI/u-GaN异质结，实现了具有自供电特性的紫外探测器。该探测器在360nm的紫外光波段具有大响应度（51mAW-1）、高比探测率（6.1×1011Jones）、较快响应速度（上升时间约32ms，衰减时间约36ms）及良好的稳定性。这些结果表明，采用热升华结合空间限制退火技术能够制备出高质量的p-CuI薄膜，p-CuI/u-GaN异质结自供电紫外探测器为高性能半导体紫外光电探测器件的制备提供了新的方法和途径。

Abstract:

Self-powered heterojunction semiconductor ultraviolet (UV) photodetectors, characterized by low power consumption, high sensitivity, and fast response speed, have received a lot of attention from researchers. This study employs a simple vacuum thermal sublimation method to prepare highly crystalline CuI thin films. Additionally, a smooth and dense polycrystalline film is achieved by improving the smoothness and density using confined space annealing. By building a p-CuI/u-GaN heterojunction, Self-powered UV photodetectors have been constructed. The device exhibits excellent performance, including high responsivity（51 mA/W-1）, high detectivity（6.5×1011 Jones）, fast response times（approximately 32 ms rise time and 36 ms decay time）, and good stability at the 360 nm wavelength. Additionally, it features self-powering capabilities. This work provides a facile method to prepare high-quality semiconductor CuI films and offers a new insight for the fabrication of high-performance UV photodetectors.