基于石墨烯/镓锡复合热界面材料的硅阶梯异质集成结构半导体激光器

A silicon step heterojunction integrated semiconductor laser based on graphene/gallium tin composite thermal interface materialWangYue1, ShiLinlin1*, DaiYucheng1, SunSongwei1,

摘要:

为实现硅基异质集成半导体激光器,并且缓解半导体激光器阵列各发光单元温度不均匀等问题,提出了一种基于石墨烯/镓锡合金作为复合热界面材料的硅阶梯异质集成半导体激光器阵列。利用有限元软件分析研究了阶梯结构和传统结构的硅异质集成器件,对比发现阶梯结构硅异质集成器件有源区结温降低2.728℃。利用石墨烯/镓锡合金缓解硅和Ⅲ-Ⅴ族半导体间热膨胀系数差距较大等问题,在阶梯状硅基底上结合石墨烯/镓锡合金对异质集成半导体激光器阵列实现低温键合。封装后的阶梯结构与传统结构进行光谱和功率-电流-电压测试发现,阶梯结构封装后的热阻降低,输出功率提高了6.4%。

Abstract:

To achieve silicon-based heterojunction integrated semiconductor lasers and alleviate the problem of uneven temperature of each emitting unit in the semiconductor laser array, a silicon stepped heterojunction integrated semiconductor laser array based on graphene gallium tin alloy as a composite thermal interface material is proposed. Finite element software was used to analyze and study silicon heterojunction integrated devices with stepped structure and traditional structure. The comparison showed that the active junction temperature of the stepped structure silicon heterojunction integrated device decreased by 2.728 ℃. Utilizing graphene gallium tin alloy to alleviate the problem of large differences in thermal expansion coefficients between silicon and III-V group semiconductors, low-temperature bonding of heterojunction integrated semiconductor laser arrays is achieved by combining graphene gallium tin alloy on a stepped silicon substrate. Spectral and power current voltage tests were conducted on the encapsulated stepped structure compared to traditional structures, and it was found that the thermal resistance of the stepped structure was reduced and the output power was increased by 6.4%.