低背景和高背景下长波碲镉汞红外探测器的性能比较

Detectivity study of long-wave HgCdTe infrared detector at low/room temperature blackbody

摘要:

p-on-n型长波碲镉汞红外探测器相比n-on-p型有着更低的暗电流,较小的暗电流使探测器可以在低背景的探测中具有较高的探测能力,针对器件响应测试在常温黑体背景下,探测率受积分时间较短的影响而无法有效提高,采用将低温黑体辐射源置于杜瓦腔体内,对器件在低温背景下的探测率D*^{与器件工作温度、黑体辐射源温度的变化关系进行测试与分析。在}低背景下对于p-on-n型红外探测器探测率D*^{的测试结果可为器件的应用提供指导。}

Abstract:

P-on-N type long-wave HgCdTe infrared detector has a lower dark current than n-on-p type, and the smaller dark current enables the detector to have higher detection ability in the detection of low radiation flux. In view of the fact that the detectivity of the device response test cannot be effectively improved due to the short integration time in the context of the blackbody at room temperature, the relationship between the detectivity D_* ^{of the device} in the low temperature background and the working temperature of the device as well as the temperature of the blackbody radiation source is tested and analyzed with placing the low-temperature blackbody radiation source in the Dewar cavity. The test results of the detectivity D^_* of the p-on-n type infrared detector at low luminous flux can provide guidance for the application of the device.