脉冲反应磁控溅射频率对VOx薄膜的调控与优化

Regulation and optimization of VOx film growth by pulsed response magnetron sputtering frequency

摘要:

通过脉冲反应磁控溅射以不同脉冲频率在玻璃衬底上制备了不同厚度的氧化钒薄膜,研究了退火对不同脉冲频率制备的氧化钒薄膜的影响。研究发现在适当氧氩比溅射气氛下,脉冲频率的提高会导致薄膜的生长速率下降,并促进钒的氧化,使薄膜中的高价态钒的比例提高,薄膜电阻率上升。对沉积的薄膜进行退火处理,发现随着退火时间的延长,所有脉冲频率沉积的薄膜的电阻率均有不同程度的降低,除200kHz外,其余薄膜随着退火时间的延长,薄膜的电阻温度系数也有一定的提升,例如300kHz沉积的氧化钒薄膜在经历377℃ 60min的真空退火后,方阻由2163kΩ/□下降至684kΩ/□,TCR由-2.096%/k提高至-2.516%/k,该结果证明了通过脉冲频率和退火相结合的方法对氧化钒薄膜的调控和优化作用。

Abstract:

Vanadium oxide films of different thickness were prepared on glass substrate by pulsed reactive magnetron sputtering with different pulse frequencies. The effect of annealing on vanadium oxide films prepared with different pulse frequencies was studied. It is found that the growth rate of the film decreases and the oxidation of vanadium is promoted with the increase of pulse frequency in the appropriate oxygen/argon sputtering atmosphere. After annealing the deposited films, it was found that with the extension of annealing time, the resistivity of all the films deposited at pulse frequencies decreased to varying degrees. Except 200kHz, the temperature coefficient of resistance of the films also increased with the extension of annealing time. For example, after vacuum annealing at 377℃ for 60min at 300kHz, the square resistivity of vanadium oxide films deposited at 300khz decreases from 2163KΩ/□ to 684kΩ/□, and the TCR increases from -2.096%/k to -2.516%/k, which proves the regulation and optimization of vanadium oxide films by combining pulse frequency and annealing.