红外探测器芯片高可靠性键合工艺研究

High-reliability Bonding Process of Infrared Detector Chip

摘要:

金丝键合工艺广泛应用于红外探测器的封装环节。实验选用25μm金丝,基于正交试验法,根据键合拉力值确定键合的最佳工艺参数。通过优化超声压力、超声功率、超声时间及接触力等工艺参数组合,改善了键合引线的电气连接性能和连接强度,从而提高芯片系统的信号传输质量。提出的引线键合工艺参数组合适用于红外探测芯片的键合。

Abstract:

Gold-wire bonding is widely used in the packaging of infrared detectors. In this study, a 25μm gold wire was selected to determine the best process parameters for bonding with respect to the tensile value of bonding strength based on the orthogonal experimental method. The combination of the ultrasonic process parameters of pressure, power, and time, with contact force was optimized, to improve electrical connection performance and connection strength of the bonded leads, thereby enhancing the signal transmission quality of the chip system. The combination of the wire bonding process parameters proposed in this study is applicable to the bonding of infrared detection chips.