高品质磷化铟多晶的HGF法合成研究

Synthesis of High-quality Indium Phosphide Polycrystal using Horizontal Gradient-freeze Method

摘要:

用高压水平温度梯度定向结晶技术合成了磷化铟(InP)多晶。分析了不同温度梯度对多晶配比度的影响,结果表明当温度梯度低于4℃/cm时,多晶呈明显富铟状态,配比度在97%以下；当温度梯度在5℃/cm以上时多晶致密、无铟夹杂,达到近化学配比状态,配比度达到99%以上。对多晶样品进行了霍尔测试和辉光放电质谱(GDMS)测试,合成的高配比度磷化铟多晶载流子浓度在8×10¹⁵cm-3以下,迁移率在3900cm²·V-1·s-1以上,纯度达到99.99999%以上。多晶中的杂质主要有Si,S,Fe,Cu,Zn,As等,分析了杂质的来源及其对材料性能的影响。

Abstract:

Indium phosphide (InP) polycrystals were synthesized using the horizontal gradient-freeze method. The influence of different temperature gradients on the ratio of polycrystals was analyzed, The results show that the crystals are indium-rich with a ratio of less than 97% when the temperature gradient is lower than 4℃/cm, and the crystals are stoichiometric with a ratio of more than 99% when the temperature gradient is above 5℃/cm. The impurities and electrical properties of the polycrystalline samples were analyzed using glow discharge mass spectrometry (GDMS) and Hall tests. The purity of stoichiometric InP polycrystals was greater than 99.99999%; the carrier concentration was less than 8×10¹⁵cm-3; the mobility was greater than 3900cm²·V-1·s-1. The impurities in the polycrystals primarily included Si, S, Fe, Cu, Zn, and As. The sources of the impurities and their effects on the properties of the materials were analyzed.