硫系非晶态半导体人工神经突触的可塑性

Chalcogenide Amorphous Semiconductor Artificial Synaptic Plasticity

摘要:

模拟大脑中的神经突触是实现下一代计算机——类脑神经形态计算的关键一步。为了利用光子模拟神经突触的可塑性进而发展全光人工神经突触器件,文章开展了基于可控光诱导抑制效应的硫系非晶态半导体人工神经突触的实验研究。分析了材料化学组分和抽运光功率对该人工神经突触的调控作用,描述了该人工神经突触的可塑性。结果表明掺入不同杂质的硫系非晶态半导体平面波导具有不同的可控光诱导抑制过程,且抑制深度受控于抽运光功率的变化。基于这些特性,该人工神经突触展现出了配对脉冲易化功能、短程抑制功能、长程抑制功能,具有良好的可塑性。

Abstract:

Simulating the neural synapses of the brain is a key step to realize the next generation computer, that is, the brain-like neuromorphic computing system. To mimic the plasticity of neural synapses using photons and develop all-optical artificial synaptic devices, we carried out an experimental study on the chalcogenide amorphous semiconductor artificial synaptic device based on controllable light-induced inhibition. The control of the material chemical composition and pumping optical power on the artificial neural synapse was studied, and the plasticity of the artificial neural synapse was described. The results show that As-S planar waveguides with different impurities have different light-induced inhibition processes, and different pumping optical powers correspond to different suppression depths. Based on these characteristics, the artificial neural synapse exhibits short-term plasticity (STP), long-term plasticity (LTP), and paired-pulse depression (PPD), demonstrating that it has good plasticity.