溴化锑后处理的钙钛矿量子点及其发光二极管

Perovskite quantum dots post-treated with antimony bromide and Perovskite QLED

摘要:

采用LARP法在室温下合成SbBr3后处理的CsPbBr3钙钛矿量子点,测试结果发现,SbBr3后处理能够有效改善CsPbBr3量子点的光电特性。TEM、PL以及XPS谱图分析表明,Sb3+^{被成功引入晶格,减少了晶格缺陷,}XRD测试证明了后处理不会改变量子点的立方结构。经过后处理,量子点的荧光寿命达到了36.02 ns,同时光稳定性也得到提升,150分钟365 nm紫外灯的照射后,后处理量子点的发光强度仍能保持初始强度的87 %以上,且发光峰没有发生偏移。使用后处理量子点制备的QLED器件,发光强度是原始器件的4倍以上,达到了20260 cd/m2^,CIE色坐标为(0.095,0.753),具有较高的色纯度,最大电流效率、功率效率、EQE均得到了显著提升。

Abstract:

SbBr3 post-treatment of CsPbBr3 perovskite quantum dots was synthesised using the LARP method at room temperature, and the test results revealed that the SbBr3 post-treatment could effectively improve the photoelectric properties of CsPbBr3 quantum dots. TEM, PL and XPS spectroscopic analyses showed that Sb³⁺ was successfully introduced into the lattice, reducing lattice defects, and XRD test proves that post-treatment does not change the cubic structure of quantum dots. After post-treatment, the fluorescence lifetime of the quantum dots reached 36.02 ns, while the photostability was also improved. After 150 min of 365 nm UV lamp irradiation, the luminescence intensity of the post-treated quantum dots still maintains more than 87 % of the initial intensity, and the luminescence peaks are not shifted. QLED devices prepared using post-treated quantum dots emit more than four times as much light as the original devices, reaching 20,260 cd/m2^. The CIE colour coordinate is (0.095, 0.753) with high colour purity, and the maximum current efficiency, power efficiency and EQE have been significantly improved.