六方氮化硼忆阻器的研究进展

Research Progress of Hexagonal Boron Nitride Memristor

摘要:

六方氮化硼是一种与石墨烯结构相似的材料,以六方氮化硼作为阻变介质层的忆阻器,具有良好的散热性能,不易发生介电击穿,能够实现小尺寸、低功耗和大的开关比；在计算机运算存储研究、人工神经网络和神经形态(即类脑)计算领域有极大的应用前景。文章主要介绍了忆阻器的分类,分析了六方氮化硼忆阻器的阻变机制,综述了六方氮化硼忆阻器的研究现状。最后,指出了六方氮化硼忆阻器当前面临的挑战,并展望了未来的发展方向。

Abstract:

As a graphene-like structural material, hexagonal boron nitride (h-BN) possesses many superior properties. Owing to their enhanced qualities such as simple device structure, low power consumption, and good scalability potential, h-BN memristors are receiving increasing attention and are currently considered to hold great application prospects in the fields of computing and storage, artificial neural networks, and neuromorphic computing. In this paper, a classification of memristors is introduced, the resistive switching mechanism of the h-BN memristor is discussed, and the research status of the h-BN memristor is reviewed. Finally, the current challenges of the h-BN memristor are pointed out, and the paper concludes with an outlook of the future direction of development.