高品质磷化铟多晶的HGF法合成研究

Synthesis of high quality indium phosphide polycrystal by HGF method

摘要:

用高压水平温度梯度定向结晶技术合成了磷化铟（InP）多晶。分析了不同温度梯度对多晶配比度的影响，结果表明当温度梯度低于4 ℃/cm时，多晶呈明显富铟状态，配比度在97%以下；当温度梯度在5 ℃/cm以上时多晶致密、无铟夹杂，达到进化学配比状态，配比度达到99%以上。对多晶样品进行了霍尔测试和辉光放电质谱（GDMS）测试，合成的高配比度磷化铟多晶载流子浓度在8×1015 cm-3以下，迁移率在3900 cm2V-1s-1以上，纯度达到99.99999% 以上。多晶中的杂质主要有Si、S、Fe、Cu、Zn、As等，分析了杂质的来源及其对材料性能的影响。

Abstract:

Indium phosphide (InP) polycrystals were synthesized by Horizontal Gradient Freeze method．The influence of different temperature gradients on the ratio of polycrystals was analyzed, The results show that the crystals are indium-rich with a ratio of less than 97% when temperature gradient is lower than 4 ℃/cm, and the crystals are stoichiometric with a ratio of more than 99% when temperature gradient is above 5 ℃/cm. Impurities and Electrical property of polycrystalline samples were analyzed by glow discharge mass spectrometry (GDMS) and Hall test. The purity of stoichiometric InP polycrystals is above 99.99999%, and the carrier concentration is below 8×1015 cm-3, the mobility is above 3900 cm2V-1s-1. The impurities in polycrystal mainly include Si, S, Fe, Cu, Zn, As, etc. The sources of impurities and their effects on properties of the materials were analyzed.