量子级联激光器热仿真与分析

Thermal Simulation and Analysis of Quantum Cascade Laser

摘要:

本文针对大功率量子级联激光器对提高散热能力的迫切需求，通过有限元法建立常见器件结构的二维散热模型。通过设置的热沉温度为293K，波长为8.3μm，波导宽为8μm，发热功率为13.4W的器件模型，研究了不同器件散热结构和封装结构对量子级联激光器的温度及热通量分布的影响，进而评价器件的散热能力。结果表明，正焊无电镀金双沟道脊器件、正焊有电镀金双沟道脊器件和倒焊器件的器件最高温度分别为609K、453K和369K。掩埋异质结器件中，正焊无电镀金器件、正焊有电镀金器件、倒焊器件的最高温度分别为453K、442K、368K。与使用铜底座相比，使用金刚石底座的掩埋异质结倒焊器件有源区的最高温度为362K。通过对模型热通量分布的分析，表明掩埋异质结器件的热量分布更加均匀，有源区温度更低，这意味着掩埋异质结更适合高功率器件。

Abstract:

In order to improve the heat dissipation capacity of quantum cascade lasers (QCLs), two-dimensional heat dissipation models of common devices were established by finite element method. By setting the heatsink temperature at 293K, the wavelength at 8.3μm, the waveguide width at 8μm and the thermal power at 13.08W, the temperature and heat flux distribution and then the heat dissipation capabilities of QCLs with different device structures were studied. The results show that the highest temperatures of the epilayer-up bonded, double-channel ridge device without electroplated gold, epilayer-up bonded, double-channel ridge device with electroplated gold and epilayer-down bonded device are 609K, 453K and 369K respectively. For buried heterostructure (BH) devices, the highest temperatures of the epilayer-up bonded device without electroplated gold, epilayer-up bonded device with electroplated gold, epilayer-down bonded device are 453K, 442K, 368K respectively. Compared with copper submount, the highest temperature of the buried heterostructure, epilayer-down bonded to a diamond submount device is 362K. Through the analysis of the heat flux distribution of the models, it shows that the heat flux of BH devices is more uniform and the temperature of the core area is lower, which means BH structures are more suitable for high power devices.