Theoretical analysis of the self-feedback injection locking of the external cavity of the semiconductor laser is carried out. The influence of the self-feedback injection locking of the on-chip microcavity on the output linewidth of the DFB (distributed feedback) laser is studied, and the key parameters determining the locking bandwidth and the linewidth compression factor are analyzed. Based on the back Rayleigh scattering of the on-chip Si3N4 microcavity with a Q value of 2.4×106, the self-feedback injection locking of the DFB laser is realized. The line width is narrowed from 556.71 kHz during free-running to 92.28 kHz, and the locking bandwidth reaches 425MHz. The research results provide a new solution with simpler structure and higher integration potential for the realization of narrow linewidth lasers.xxxxx (摘要内容:五号Times New Roman)