ZnO 基异质结紫外探测器光电特性研究

Study on the Photoelectric Characteristics of ZnO Based Heterojunction UV Detectors

摘要:

利用仿真软件对n-ZnO/p-SiC异质结紫外探测器建模,基于所建的模型,从外加偏压、ZnO载流子浓度和ZnO厚度等角度模拟分析n-ZnO/p-SiC异质结紫外探测器的光电特性,如电场分布、暗电流、光电流、响应度以及响应时间等,并与n-ZnO/p-Si异质结紫外探测器比较。结果表明:相比于n-ZnO/p-Si 异质结紫外探测器,n-ZnO/p-SiC异质结紫外探测器暗电流更低为10-15量级,比n-ZnO/p-Si异质结紫外探测器降低了一个数量级,光电流均为10-8量级,变化不大,n-ZnO/p-SiC响应度更高,最高可达0.41 A/W,且能够有效抑制n-ZnO/p-Si异质结紫外探测器对可见光的响应。以上仿真结果与实验测得的数据具有高度的一致性,仿真计算结果为后续进一步优化异质结紫外探测器的光电特性奠定了理论基础。

Abstract:

Using simulation software to model the n-ZnO/p-SiC heterojunction ultraviolet detector, based on the established model, the photoelectric characteristics of the n-ZnO/p-SiC heterojunction ultraviolet detector, such as electric field distribution, dark current, photocurrent, responsivity, and response time, were simulated and analyzed from the perspectives of applied bias, ZnO carrier concentration, and ZnO thickness. The results were compared with the n-ZnO/p-Si heterojunction ultraviolet detector. The results show that compared to n-ZnO/p-Si heterojunction UV detectors, the dark current of n-ZnO/p-SiC heterojunction UV detectors is lower by 10-15 orders of magnitude, which is one order of magnitude lower than n-ZnO/p-Si heterojunction UV detectors. The photoelectric current is all of the order of 10-8, with little change. n-ZnO/p-SiC heterojunction UV detectors have higher responsivity, up to 0.41 A/W, and can effectively suppress the response of n-ZnO/p-Si heterojunction UV detectors to visible light. The above simulation results are highly consistent with the experimental data, which lays a theoretical foundation for further optimizing the photoelectric characteristics of heterojunction ultraviolet detectors in the future.