1064nm低电压薄膜铌酸锂电光调制器

Low-voltage Thin Film lithium niobate electro-optic modulator for 1064nm

摘要:

低半波电压电光调制器是实现大规模光电集成的关键。本文提出一种半波电压低于1.5V的薄膜铌酸锂Mach-Zehnder电光调制器，选用绝缘体上单晶薄膜铌酸锂材料作为设计基础，分析了直波导、多模干涉耦合器、弯曲波导和调制臂等结构对电光调制器的影响。结果表明，当调制臂长为3mm时，该薄膜铌酸锂电光调制器具有1.05V的低半波电压、0.319dB的低损耗和27dB的高消光比。同时，该调制器半波电压长度积为0.315V·cm，调制效率高，具有与CMOS技术兼容的半波电压，有利于大规模光电集成。

Abstract:

The low half-wave voltage electro-optic modulator is crucial for achieving large-scale photonic integration. This article proposes a thin film lithium niobate Mach-Zehnder electro-optic modulator with a half-wave voltage below 1.5V. The design is based on a single crystal thin film lithium niobate material on an insulator. The influence of the straight waveguide, multimode interference coupler, bent waveguide, and modulation arm on the electro-optic modulator is analyzed. The results show that when the length of the modulation arm is 3mm, this thin film lithium niobate electro-optic modulator has a low half-wave voltage of 1.05V, a low loss of 0.319dB, and a high extinction ratio of 27dB. At the same time, the modulator has a half-wave voltage-length product of 0.315V·cm, high modulation efficiency, and a half-wave voltage compatible with CMOS technology, which is beneficial for large-scale photonic integration.