高性能ZnSnO:Li/ZnSnO双有源层TFT电学性能的研究

Study on the electrical properties of high-performance ZnSnO:Li/ZnSnO dual active layer TFT

摘要:

双有源层以迁移率高、开关比高、大面积均匀性强等优点成为了近些年研究热点,采用射频磁控溅射方法,制备了ZnSnO:Li/ZnSnO 薄膜晶体管并对其电学特性进行了测试,研究了具有双层结构的ZTO:Li/ZTO TFT提高迁移率下的原理机制。对比于ZTO TFT,该ZTO:Li/ZTO TFT表现出了良好的电学特性,场效应迁移为率13.98 cm²/Vs,亚阈值摆幅为0.84 V/dec,开关比为1.13×10⁹,通过XPS对薄膜分析,发现ZTO层中掺入Li,引起薄膜中金属与氧键结合浓度增加,氧空位减少,因而其TFT的迁移率增大,开关比增大,亚阈值摆幅减小。这些优异的性能都与掺 Li的ZTO薄膜有关。

Abstract:

The double active layer has become a research hotspot in recent years with the advantages of high mobility, high switching ratio and strong uniformity over a large area, and ZnSnO:Li/ZnSnO thin-film transistors were prepared by RF magnetron sputtering method and their electrical properties were tested, and the principle mechanism of ZTO:Li/ZTO TFT with bilayer structure under increased mobility was studied. Compared with ZTO TFT, the ZTO:Li/ZTO TFT showed good electrical properties, the field effect migration rate was 13.98 cm²/Vs, the subthreshold swing was 0.84V/dec, and the switching ratio was 1.13×10⁹. These excellent properties are related to Li-doped ZTO films.