高性能ZnSnO∶Li/ZnSnO双有源层TFT电学性能的研究

Study on the Electrical Properties of High-performance ZnSnO∶Li/ZnSnO Dual Active Layer TFT

摘要:

双有源层以迁移率高、开关比高、大面积均匀性好等优点成为近年研究热点。采用射频磁控溅射方法,制备了ZnSnO∶Li/ZnSnO 薄膜晶体管(TFT),对其电学特性进行了测试,并研究了器件迁移率提高的原因及其内在的微观机制。研究发现,ZTO∶Li/ZTO TFT表现出了良好的电学特性,其场效应迁移为率为13.98cm²/(V·s),亚阈值摆幅为0.84V/dec,开关比为1.13×10⁹。通过XPS对其薄膜进行分析发现,Li的引入导致薄膜中氧和金属结合键的浓度增加,氧空位浓度减少,从而使得TFT的迁移率增大,开关比增大,亚阈值摆幅减小。

Abstract:

The dual active layer has become a research hotspot in recent years due to its high mobility, high switching ratio, and strong uniformity in large area. In this paper, ZnSnO∶Li/ZnSnO thin-film transistors were fabricated by RF magnetron sputtering, and their electrical properties were tested, and the reasons for the increase of device mobility and its internal microscopic mechanism were studied. It is found that the ZTO∶Li/ZTO TFT exhibits good electrical characteristics, with a field-effect migration rate of 13.98cm²/(V·s), a subthreshold swing of 0.84V/dec, and a switching ratio of 1.13×10⁹. Through the analysis of the thin film by XPS, it was found that the introduction of Li led to an increase in the concentration of oxygen-metal binding bonds and a decrease in the concentration of oxygen vacancies in the film, which in turn increased the mobility of TFT, increased the switching ratio, and decreased the subthreshold swing.