ZnO基异质结紫外探测器光电特性研究

Study on the Photoelectric Characteristics of ZnO Based Heterojunction UV Detectors

摘要:

n-ZnO/p-Si异质结紫外探测器存在响应度低和响应范围广的问题,为了获得更好的紫外探测性能,设计了一种n-ZnO/p-SiC异质结紫外探测器。应用TCAD仿真软件模拟了n-ZnO/p-SiC异质结紫外探测器的光学和电学特性,模拟结果表明:n-ZnO/p-SiC异质结紫外探测器暗电流为10-15A,较n-ZnO/p-Si异质结紫外探测器降低了一个数量级；ZnO/p-SiC探测器响应度高达0.41A/W,较n-ZnO/p-Si器件提高了156%,且n-ZnO/p-SiC紫外探测器仅对紫外光有响应,有效抑制了n-ZnO/p-Si紫外探测器对可见光的响应。

Abstract:

The n-ZnO/p-Si heterojunction ultraviolet (UV) detector suffers from low responsivity and wide response range. In order to obtain better UV detection performance, the n-ZnO/p-SiC heterojunction UV detector was designed in this study. TCAD software was applied to simulate the optoelectronic properties of n-ZnO/p-SiC heterojunction UV detectors. The simulation results show that the dark current of the n-ZnO/p-SiC heterojunction UV detector was 10-15A, which was one order of magnitude lower than that of the n-ZnO/p-Si heterojunction UV detector; the responsivity of the ZnO/p-SiC detector reached as high as 0.41A/W, which was 156% higher than that of the n-ZnO/p-Si device; The n-ZnO/p-SiC UV detector only responded to UV light, effectively suppressing the response of the n-ZnO/p-Si UV detector to visible light.