多光谱TDI-CMOS图像传感器读出电路设计

Readout Circuit Design of Multispectral TDI-CMOS Image Sensor

摘要:

针对3D集成式多光谱TDI-CMOS图像传感器的数字化处理和高速读出需求,为了解决与TDICCD探测器的整体布局、物理尺寸和接口的匹配性和一致性问题,研制了适用于五谱段TDICCD的CMOS读出电路芯片。该读出电路芯片创新地设计了一种使用多相位ADC时钟、支持相关多次采样的新型列级单斜ADC电路结构,实现了TDICCD信号的数字化和高速输出,有效提升了探测器的动态范围和噪声指标。流片测试结果表明:读出电路芯片的功能正常,集成式TDICCD的成像效果良好,新型列级ADC工作正常,读出电路以最小9.5us的行周期输出14bit数据,相关多次采样具备降低输出信号噪声的作用,实现了TDICCD信号的高精度数字化处理和高速输出,满足3D集成式TDI-CMOS图像传感器的研制要求。

Abstract:

A CMOS readout IC for five-spectrum-band TDICCD detector was developed to address the digitization and high-speed readout requirements of 3D integrated multispectral TDI-CMOS image sensors and to solve the matching and consistency problems of the overall layout, physical size and I/O interface with the TDICCD detector. A new column single-slope ADC architecture was designed for this readout IC, which uses multi-phase ADC clock and supports correlated multiple sampling(CMS), realizing the digitization and high-speed output of TDICCD output signals and effectively improving the dynamic range and noise performance of the TDICCD detector. The tests after tapeout shows that the readout IC functions normally, the imaging results of the integrated TDICCD detector is good and the new column ADC works fine. The readout IC outputs 14bit data with a minimum line readout period of 9.5us, and the CMS reduces output noise effectively, realizing the high-precision digital processing and high-speed output of the TDICCD output signal and meeting the requirements of 3D integrated TDI-CMOS image sensor development.