WO3/SnO2复合薄膜的制备及光电性能

Preparation and photoelectric properties of WO3/SnO2 composite films

摘要:

采用水热法和电化学沉积法，成功制备了包覆有SnO2纳米颗粒的WO3纳米棒阵列薄膜，退火处理后形成WO3/SnO2异质结复合薄膜。通过改变SnO2的沉积时间得到了复合薄膜的最佳制备条件。采用XRD、FESEM对WO3/SnO2复合薄膜的物相和形貌进行了分析，通过电化学工作站对WO3/SnO2复合薄膜的光电性能进行了研究，结果表明，电沉积时间为120s时，WO3/SnO2复合薄膜具有最小的阻抗，且在0.6V的偏压下光电流密度为0.46mA/cm2，相比于单一WO3纳米棒薄膜，表现出更好的光电化学性能。

Abstract:

WO3 nanorods array films coated with SnO2 nanoparticles were prepared by hydrothermal method and electrochemical deposition method, and WO3/SnO2 heterojunction composite films were formed after annealing. The optimum preparation conditions were obtained by changing the deposition time of SnO2. The phase and morphology of WO3/SnO2 composite film were analyzed by XRD and FESEM. The photoelectric properties of WO3/SnO2 composite film were studied by electrochemical workstation. The results show that WO3/SnO2 composite film has the minimum impedance when the deposition time is 120s. And the photocurrent density is 0.46mA/cm2 at a bias voltage of 0.6V, showing better photochemical properties than a single WO3 nanorod film.