WO3/SnO2复合薄膜的制备及光电性能

Preparation and Photoelectric Properties of WO3/SnO2 Composite Films

摘要:

采用水热法和电化学沉积法,成功制备了包覆有SnO₂纳米颗粒的WO₃纳米棒阵列薄膜,退火处理后形成WO₃/SnO₂异质结复合薄膜。通过改变SnO₂的沉积时间得到了复合薄膜的最佳制备条件。采用XRD,FESEM对WO₃/SnO₂复合薄膜的物相和形貌进行了分析,通过电化学工作站对WO₃/SnO₂复合薄膜的光电性能进行了研究,结果表明,电沉积时间为120s时,WO₃/SnO₂复合薄膜具有最小的阻抗,且在0.6V的偏压下光电流密度为0.46mA/cm²,相比于单一WO₃纳米棒薄膜,表现出更好的光电化学性能。

Abstract:

WO₃ nanorods array films coated with SnO₂ nanoparticles were prepared by hydrothermal method and electrochemical deposition method, and WO₃/SnO₂ heterojunction composite films were formed after annealing. The optimum preparation conditions were obtained by changing the deposition time of SnO₂. The phase and morphology of WO₃/SnO₂ composite film were analyzed by XRD and FESEM. The photoelectric properties of WO₃/SnO₂ composite film were studied by electrochemical workstation. The results show that WO₃/SnO₂ composite film has the minimum impedance when the deposition time is 120s. And its photocurrent density is 0.46mA/cm² at a bias voltage of 0.6V, showing better photochemical properties than a single WO₃ nanorod film.