液相外延碲镉汞中砷离子注入与激活表征研究

Characterization of As ion implantation and activation in LPE-grown HgCdTe

摘要:

As在HgCdTe材料中具有较小的扩散系数,可以形成较为稳定的结构,广泛应用于HgCdTe的p型掺杂。在p-on-n型碲镉汞红外探测器的制备中As掺杂是重要的制备方法。针对在制备过程中存在无法精确测量As激活率的问题,提出采用低温弱p型退火辅助霍尔测试的方法,获得了载流子浓度分布,从而通过与SIMS测试结果对比得到长、中波液相外延HgCdTe材料中As的激活率约为57.5±3%,并分析了退火等工艺对As掺杂后激活率的影响。

Abstract:

As has a small diffusion coefficient in HgCdTe material and can form a relatively stable structure, which is widely used in p-type doping of HgCdTe. As doping is an important method in the preparation of p-on-n type HgCdTe infrared detector. In view of the problem that the As activation rate cannot be accurately measured, a low temperature weak p-type annealing assisted hall test method is proposed to obtain the carrier concentration distribution. By comparing with the SIMS test results, the As activation rate in the long and medium wave liquid phase epitaxy HgCdTe material is about 57.5 ± 3%,the influence of annealing and other processes on the activation rate after As doping is analyzed.