基于忆阻器结构的Ge基光控晶体管制备及其光电性能研究[*]

Preparation and photoelectric properties research on Ge-based phototransistor based on memristor structure

摘要:

面向下一代光电芯片产业，设计并制备一种基于忆阻器结构且具有可编程特性的Ge基光控晶体管，它由两个结构为Ni/Ge/GeOx/Al2O3:HfO2/Pd的忆阻器背对背组成，共用阻变层GeOx/Al2O3:HfO2、衬底Ge和底电极Ni，阻变层的设计是实现光控晶体管功能的关键。两个顶电极Pd作为光控晶体管源漏极，中间区域作为栅极接受外加光源的栅控。探究Ge基忆阻器光电响应特性,并实现光控晶体管基于光源栅控的输出与转移特性。进一步的，探究器件物理机制验证设计的科学性和可行性。该光控晶体管具有非易失性、与标准CMOS工艺兼容性等优势，能有效简化器件制备工艺、降低制造成本，可为下一代光电芯片研发提供参考。

Abstract:

For the next-generation of optoelectronic chip industry, we designed and prepared a Ge-based phototransistor with programmable characteristics based on the memristor structure, which consisted of two back-to-back memristors structured with Ni/Ge/GeOx/Al2O3:HfO2/Pd, sharing the same resistance switch layer GeOx/Al2O3:HfO2, substrate Ge and bottom electrode Ni. The design of the resistance switch layer was the key to realize the function of phototransistor. The top electrodes Pd were used as the source-drain electrodes of the phototransistor, and the area between the two memristors was used as the gate of the phototransistor to receive regulation from external illuminant. The electrical and optical response characteristics of a single Ge-based memristor were explored. The output and transfer characteristics of the phototransistor based on gate-control from illuminant were realized. Furthermore, we verified the scientificalness and feasibility of this design through exploring the device physics and mechanism analysis. The phototransistor has advantages of non-volatility and compatibility with standard CMOS process, which can effectively simplify the process and reduce fabrication cost of chip. This phototransistor could provide reference for the next-generation of optoelectronic chip to some extent.