基于正交实验法的混合相VOx薄膜最佳制备参数研究

Growth of Mixed-phase VOx Thin Films under Orthogonal Designed Spurring Conditions

摘要:

为研究磁控溅射的衬底温度、氧氩比、沉积时间和工作气体流量对混合相VOx薄膜电学性能的影响，本文采用正交实验法，设计了4因素4水平16组实验，实施实验并记录样品电阻温度系数和方阻值，分析薄膜电学性能随不同因素不同水平的变化趋势；然后，结合均值和方差分析以及XPS分析，得到不同因素影响混合相VOx薄膜电学性能程度的显著关系为：工作气体流量>衬底温度>氧氩比>沉积时间。最后，得出制备混合相VOx薄膜的优选参数：溅射电流0.3 A，衬底温度270℃，氧氩比2.8%，沉积时间20 min，工作气体流量120 sccm，测试结果TCR-2.65%/K，方阻值1102.1 KΩ/□。

Abstract:

The factors affecting mixed-phase VOx thin film properties are examined: substrate temperature, oxygen-argon ratio, spurring time and working gas flow rate, under orthogonal magnetron spurring conditions (16 test-groups, 4 factors, 4 levels). Temperature coefficient of resistance and sheet resistance are two key indicators of the electrical properties of thin films. Then, combined with mean and variance analysis and XPS analysis, the degree to the electrical properties was obtained: within the control range, working gas flow > substrate temperature > oxygen-argon ratio > deposition time. Finally, the preferred parameters for mixed-phase VOx films preparation are obtained: sputtering current at 0.3 A, substrate temperature at 270 °C, oxygen-argon ratio at 2.8%, deposition time at 20 min, working gas flow rate at 120 sccm, with TCR of -2.65%/K and sheet resistance of 1102.1 KΩ/□.