GaN压电半导体杆的非线性动态响应研究

Study on Nonlinear Dynamic Response of GaN Piezoelectric Semiconductor Rod

摘要:

利用有限元分析方法,研究了p型GaN压电半导体杆在简谐力作用下的拉伸振动问题,得到了位移、电势和空穴浓度非线性动态响应的数值解,并分析了简谐力对p型GaN压电半导体杆力电耦合性能的调控作用。研究结果表明,简谐力显著地影响压电半导体杆内力电场的分布情况:由于电流密度中的电非线性项,电场和空穴浓度的分布失去对称性或反对称性；力电场在简谐力驱动下表现为周期性变化,但空穴浓度的动态响应表现为明显的非对称波动。

Abstract:

The finite element method was used to study the problem of tensile vibration of p-type GaN piezoelectric semiconductor rod under the action of simple harmonic force. Numerical solutions for the nonlinear dynamic responses of displacement, electric potential and hole concentration were obtained. The modulating effect of simple harmonic force on p-type GaN piezoelectric semiconductor rod was analyzed. The results show that the simple harmonic force significantly affects the distribution of physical fields in the rod. The distributions of the electric field and hole concentration lose their symmetry or anti-symmetry due to the electrically nonlinear term in the current density. The electric fields exhibit periodic variations driven by the simple harmonic force. However, the dynamic response of hole concentration exhibits significant asymmetric fluctuations.