紧凑型纳米薄膜铌酸锂复合波导光电子可逆逻辑门

Compact Photoelectronic Reversible Logic Gate Based on Nano-film Lithium Niobate Hybrid Waveguide

摘要:

基于纳米薄膜铌酸锂与氮化硅复合波导结构,构建了光电子可逆逻辑门,应用于神经形态光子学和量子计算。该光电子可逆逻辑门的主体由两个马赫-曾德尔调制器级联而成,结构紧凑,全长仅为4.4mm,是普通质子交换铌酸锂调制器长度的百分之一。工作在1.55μm 波长时,该马赫-曾德尔调制器仅需4.9V电压就可以实现一次完整的功率交换,很好地与CMOS工艺相兼容。器件特性研究表明,该光电子可逆逻辑门能够实现可逆逻辑运算功能。此外,该器件在1.4~1.6μm波长范围内,插入损耗均值为0.6dB,输出端口的最小串扰为-47dB,消光比的最大值为41dB；在4~6V电压范围内,插入损耗均值为0.63dB,输出端口的最小串扰为-26dB,消光比的最大值为22dB,显示出了良好的响应特性。

Abstract:

A photoelectronic reversible logic gate applied to neuromorphic photonics and quantum computation was constructed with a hybrid nano-thin film lithium niobate and silicon nitride waveguide. The main structure of the photoelectronic reversible logic gate was composed of two cascaded Mach-Zehnder modulators. The total length of the gate was only 4.4mm, being only one hundredth of the length of a common proton exchange lithium niobate modulator. Operating at the wavelength of 1.55μm, the Mach-Zehnder modulator achieved a complete power exchange with only 4.9V voltage that was well compatible with CMOS process. The device characteristics show that the photoelectronic reversible logic gate can realize reversible logic operation. Moreover, in the wavelength range of 1.4μm to 1.6μm, the mean insertion loss of the device is 0.6dB, the minimum cross-talk of the output port is -47dB, and the maximum extinction ratio is 41dB. In the voltage range of 4V to 6V, the mean insertion loss is 0.63dB, the minimum cross-talk of the output port is -26dB, and the maximum extinction ratio is 22dB. Those performances guarantee the effectiveness of the photoelectronic reversible logic gate.