基于标准CMOS工艺的片上太阳敏感器研究

Research on On-chip Sun Sensor Based on Standard CMOS Process

摘要:

微纳卫星对于载荷的苛刻要求使得太阳敏感器的微型化研究具有重要意义。为了解决光学器件和处理电路的集成兼容问题,文章基于标准CMOS工艺提出一种新型片上太阳敏感器,以金属走线层构建微型墙结构,两侧均匀分布pn结构成光电传感器,通过检测两侧光电流比例解算出入射光角度。文章从工艺实现、模型建立、数值仿真和实验测试等方面验证了器件的合理性和可行性。最终,片上太阳敏感器阵列芯片质量为1.5g,尺寸为304.2mm³,检测精度为±1.6°,视场范围为80°,可满足微型化需求。

Abstract:

It is important to study the miniaturization of sun sensors used in the micro-nano satellites whose load requirement is rigorous. In order to solve the integration compatibility problem of optical devices and processing circuits, a novel on-chip sun sensor based on standard CMOS process is proposed in this paper. The micro-wall structure was constructed by metal layers, and the pn junctions were uniformly distributed on both sides as photoelectric sensors. The angle of incident light was calculated by detecting the ratio of photocurrents on both sides. The rationality and feasibility of the device were verified by the process realization, model establishment, numerical simulation and experimental testing in this paper. Finally, the on-chip sun sensor array chip is designed and fabricated whose mass is 1.5g, size is 304.2mm³, the detection accuracy is ±1.6° and the field of view range is 80°, which can meet the requirements of miniaturization.