Abstract:A high dynamic range CMOS image sensor based on the time domain is presented. The sensor is based on a novel structure that can detect high input light intensity in the time domain and low input light intensity in the analog domain. A time domain measurement circuit is added to the traditional CTIA structure, which can achieve a continuous and large dynamic range without changing the original integration process. In this paper, a 256×1 linear CMOS image sensor based on CTIA pixel circuit was implemented in 0.35 μm, 5V-CMOS process, and the photoelectric response of the device was fully characterized and simulated. The simulation results show that the time domain CMOS image sensor can reach the dynamic range of 96 dB, and the two output signals of time domain and analog domain can be output synchronously. The power consumption is 7.98 mW.