PECVD生长垂直石墨烯的场发射特性研究

The field emission character of Vertical Graphene Grown by PECVD

摘要:

采用射频等离子体增强化学气相沉积技术，以甲烷为碳源，在金属铜箔上制备了三维垂直石墨烯。通过调节生长参数，进行了七组对比实验，利用扫描电子显微镜，拉曼光谱对垂直石墨烯的形貌、质量以及层数进行了表征，用二级结构的场发射仪器测试了垂直石墨烯的场发射特性，研究了垂直石墨烯的场发射特性与其形貌、质量和密度的关系，并获得了开启电场低至0.29 V/μm的场发射特性。研究结果表明垂直石墨烯是一种良好的场发射材料，未来在真空电子源中具有广阔的应用前景。

Abstract:

In this study, three-dimensional vertical graphene was prepared on copper foil using radio frequency plasma enhanced chemical vapor deposition technology with methane as carbon source. By adjusting the growth parameters, seven groups of comparative experiments were carried out. The morphology, mass and layer number of vertical graphene were characterized by scanning electron microscope and Raman spectroscopy. The field emission characteristics of vertical graphene were measured by a secondary structure field emission instrument. The relationship between the field emission characteristics of vertical graphene and its morphology, mass and density were studied. The open electric field intensity of the field emission characteristic as low as 0.29 V/μm were obtained. The results show that vertical graphene is a material very suitable for field emission application and has broad application prospects in vacuum electron sources in the future.