In0.53Ga0.47As雪崩光电二极管单光子探测器的温度特性研究

A Study of temperature characteristics in In0.53Ga0.47As single photon avalanche diodes detector

摘要:

In0.53Ga0.47As雪崩光电二极管单光子探测器（SPAD）的响应覆盖短波950nm-1700nm，具有体积小、灵敏度高等特点，在量子通信、激光测距、激光雷达等应用有广泛前景。工作温度是影响In0.53Ga0.47As SPAD性能的重要因素，温度越高暗计数率越大，导致器件的噪声也越大。研究器件温度特性是实现暗计数抑制的重要途径。本文建立了数学模型来提取光电性能参数，通过分析吸收层、倍增层中载流子对温度的影响，获得最优器件结构参数。最后，制作了光敏面直径达到70μm的In0.53Ga0.47As SPAD芯片，并进行了封装测试。结果显示，70μm In0.53Ga0.47As SPAD在室温下的探测效率PDE为14.2%，暗计数率DCR为88.6kHz，NEP值为3.82E-16 W*Hz-1/2，仿真结果与测试结果的拟合曲线一致。

Abstract:

In_0.53Ga_0.47As single photon avalanche diodes (SPADs) response wavelength of 950nm-1700nm. With the advantages of small size and high-sensitivity, In_0.53Ga_0.47As SPADs are widely used in quantum communication, laser communication and Lidar. Temperature will influence the characteristics of the detector, that the higher temperature is ,the worse dark counting will be. So the study of temperature characteristics in In_0.53Ga_0.47As SPADs can provides important way to suppress dark counting. This article built a mathematical model to extract photoelectric parameters. By analyzing the influence of charge carriers in absorber layer and multiplication layer, optimized structure parameters are obtained. Finally, 70μm diameter size detector chips are prepared, package and test. The results show that the detection efficiency reaches 14.2%, the dark counting 88.6kHz and the NEP 3.82E-16 W*Hz^_-1/2. The test results agree will with the simulation.