水基溶液法IGZO-TFT的电学特性研究

Study on Electrical Properties of IGZO-TFT by Aqueous Solution Method

摘要:

采用水基溶液法制备铟镓锌氧化物薄膜晶体管(IGZO-TFT),研究了在有无紫外光辅助退火条件下,不同后退火温度(270,300,330,360和400℃)对IGZO-TFT器件电学性能的影响。研究发现,IGZO-TFT在后退火温度为360℃时器件电学性能最佳,从而证明了水基溶液法在小于400℃的低温下可以制备IGZO-TFT。同时,研究表明,在后退火温度为360℃时,与无紫外光辅助退火IGZO-TFT相比,经紫外光辅助退火IGZO-TFT的饱和迁移率从1.19cm²/Vs增加到1.62cm²/Vs,正栅偏压偏移量从8.7V降低至4.6V,负栅偏压偏移量从-9.7V降低至-4.4V,从而证明了紫外光辅助退火对IGZO薄膜具有激活与钝化作用,可以优化IGZO-TFT器件的电学性能。

Abstract:

Indium gallium zinc oxide thin film transistors (IGZO-TFT) were prepared by aqueous solution method, and the effects of different post-annealing temperatures (270,300, 330,360 and 400℃) on the electrical properties of IGZO-TFT devices with and without UV-assisted annealing conditions were investigated. It is found that the IGZO-TFT exhibites the best device electrical properties at the post-annealing temperature of 360℃, thus demonstrating that the aqueous solution method can prepare IGZO-TFTs at low temperatures of less than 400℃. Meanwhile, it is shown that at a post-annealing temperature of 360℃, compared with the non-UV-assisted annealed IGZO-TFT, the saturation mobility of the UV-assisted annealed IGZO-TFT increases from 1.19 to 1.62cm²/Vs, and the positive gate bias offset decreases from 8.7 to 4.6V and the negative gate bias offset decreases from -9.7 to -4.4V, thus demonstrating that UV-assisted annealing has activating and passivating effects on IGZO films, which can optimize the electrical properties of IGZO-TFT devices.