ZnSnO/AgNW双层透明电极的制备及性能研究

Investigation on Preparation and Performance of ZnSnO/AgNW Bi-layer Transparent Electrodes

摘要:

利用旋涂银纳米线和磁控溅射ZnSnO薄膜相结合的方法,实现了高性能ZnSnO/AgNW双层透明电极的制备。采用X射线衍射仪和扫描电子显微镜对电极的结构和形貌进行了表征分析,利用紫外可见分光光度计和四探针测试仪分别对ZnSnO/AgNW双层透明电极的电学和光学性能进行了表征。结果表明,制备的ZnSnO/AgNW双层透明电极具有优异的电学和光学性能,在透过率为88.1%时,其方阻为12.3Ω/□,品质因子高达231。在5.0mm的曲率半径下,对ZnSnO/AgNW双层透明电极进行了1000次弯曲测试,其电阻仅增加了13%,表明ZnSnO/AgNW双层透明电极具有优异的柔性性能。此外,ZnSnO/AgNW双层透明电极经过20次胶带粘附测试和高温高湿测试后,方阻都基本保持不变,这说明ZnSnO/AgNW双层透明电极具有优异的粘附性以及抗氧化性。

Abstract:

High-performance ZnSnO/AgNW bi-layer transparent electrode was prepared by the processes of spin coating and magnetron sputtering. The morphology and phase structure of ZnSnO/AgNW bi-layer electrode were characterized and analyzed by X-ray diffractometer and scanning electron microscope, and the electrical and optical properties of ZnSnO/AgNW bi-layer transparent electrode were characterized by UV-visible spectrophotometer and four-probe tester, respectively. The experimental results show that the ZnSnO/AgNW bi-layer transparent electrode displays excellent electrical and optical properties. Under the optimal conditions, the square resistance is 12.3Ω/□ at transmittance of 88.1%, while the quality factor is as high as 231. The ZnSnO/AgNW bi-layer transparent electrode is tested for 1000 bends at a curvature radius of 5.0mm, and its resistance increased by only 13%, demonstrating its excellent flexibility. In addition, the square resistance remained basically unchanged after 20 tape adhesion tests and high temperature and humidity tests, indicating its excellent adhesion and oxidation resistance.